MJE13003A npn silicon plasti c - encapsulate transistor features capable of 1.25watts of power dissipation. collector - current 1 . 5a collector - base volta ge 70 0v operating and storage junction temperature range: - 5 5 o c to +15 0 o c electrical characteristics @ 2 5 o c unless otherwise specified symbol parameter min max units off characteristics v (br)ceo collecto r - emitter breakdown voltage (i c = 1 0 madc, i b =0) 4 0 0 vdc v (br)cbo collecto r - base breakdown voltage (i c =1000uadc, i e =0) 7 0 0 vdc v (br)ebo emitter - base breakdown voltage (i e =10 0 0 uadc, i c =0) 9.0 vdc i cbo collector cutoff current (v cb = 70 0vdc, i e = 0 ) 1000 uadc i ce o collector cutoff cur r ent (v c e = 400 vdc, i b =0 ) 500 uadc i ebo emitter cutoff current (v eb = 9 .0vdc, i c =0 ) 1000 uadc on characteristics h fe(1) dc current gain ( i c = 0. 5 adc, v ce =5 .0vdc) 8.0 40 h fe(2) dc current gain (i c =1. 5 madc, v ce =5.0vdc) 5.0 v ce (sat) collecto r - emitter saturation voltage (i c =10 0 0 madc, i b = 2 5 0madc) 1.0 vdc v be(sat) base - emitter saturation voltage (i c =10 0 0 madc, i b = 2 5 0madc) 1.2 vdc v be base - emitter voltage (i e = 20 0 0madc) 3.0 vdc small - signal characteristics f t trans istor frequency ( i c =1 0 0 madc, v ce = 10 vdc, f = 1. 0mhz) 5.0 mhz t f fall time 0.5 us t s storage time v cc =100v , i c =1.0 a, i b1 = i b2 =0.2a 2.5 us
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! e a d f g h j j c b l m p q n r k pin 1. base pin 2. collector 1 2 3 pin 3. emitter
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